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LN Intensity Modulator

LiNbO3 Intensity Modulator is manufactured by micro-electronics technology. Waveguides on the modulator are produced by Annealed Proton Exchange(APE)process or Ti-diffusion process. They can work on single polarization or birefringence situation.With traveling-wave electrode, the modulator are ideally suited for high bandwidth operation at 1GHz, 10GHz, 20GHz, up to 30GHz. It also has highly reliable performance with wide temperature range tolerance.

Key words:

Lithium Niobate Crystal Components

Classification:

Lithium Niobate Crystal Components

WhatsApp:

+8619863680321

Email:

sales@kaxinoptic.com

Product inquiry

Applications

TDM and WDMtransmit system

RF on fiber

Long-haul transmission

Quantum key distribution

Features

Seperate bias electrode for long-termStability and reliability

High modulation on/off extinction retio

Low drive voltage

Low insertion loss

Meet Telcordia GR-468-CORE requirement

SPECIFICATIONS

	Paramaters	Unit	Spec.
Optical	Operating Wavelength	nm	1550±10
	Insertion Loss	dB	≤5
	Maxium Optical Input Powe	mW	100(APE)
			50(Ti)
	On/Off Extinction Ratio	dB	≥20@DC
	Polarization Extinction Ratio	dB	≤-20
	Return Loss	dB	≤5
	Half Wave Voltage	V	≤5
Electrical	Bandwidth (S21)	GHz	10Hz
			20Hz
			30Hz
Mechanical	Electrical Interface		SMA(10GHz)
			V connector(20GHz/30GHz)
	Pigtail Type		Panda PM fiber,FC/PC connector
Environmental	Packaging Dimensions	mm	87×14.5×10
	Operating Temperature	℃	-45~+70
	Storage Temperature	℃	-55~+85